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Model FQB50N06TM
Description QFET® N Channel MOSFET, over 31A, Fairchild Semiconductor's new QFET ® Planar MOSFETs use advanced patented technology to provide optimal performance for a wide range of applications, including power supplies, PFC (power factor correction), DC-DC converters, plasma display panels (PDP), lighting ballasts, and motion control. They reduce on state losses by lowering the on resistance (RDS (on)), and reduce switching losses by lowering the gate charge (Qg) and output capacitance (Coss). By utilizing advanced QFET technology ® Fairchild can provide higher quality factor (FOM) than competing planar MOSFET devices in terms of process technology. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
Product QR code
Brand: Fairchild
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
3.49  yuan 3.49yuan
5+:
$ 4.7156
25+:
$ 4.3663
50+:
$ 4.1217
100+:
$ 4.0170
500+:
$ 3.9471
2500+:
$ 3.8598
5000+:
$ 3.8248
10000+:
$ 3.7724
Quantity
5+
25+
50+
100+
500+
Price
$4.7156
$4.3663
$4.1217
$4.0170
$3.9471
Price $ 4.7156 $ 4.3663 $ 4.1217 $ 4.0170 $ 3.9471
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9970) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 60.0 V

Technical parameters/rated current: 50.0 A

Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 22 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 3.75 W

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/leakage source breakdown voltage: 60 V

Technical parameters/breakdown voltage of gate source: ±25.0 V

Technical parameters/Continuous drain current (Ids): 50.0 A

Technical parameters/rise time: 105 ns

Technical parameters/Input capacitance (Ciss): 1540pF @25V(Vds)

Technical parameters/rated power (Max): 3.75 W

Technical parameters/descent time: 65 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 3.75W (Ta), 120W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.67 mm

External dimensions/width: 9.65 mm

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQB50N06LTM FQB50N06LTM ON Semiconductor 类似代替 TO-263-3
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQB50N06LTM, 52 A, Vds=60 V, 3引脚 D2PAK (TO-263)封装
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FQB50N06LTM FQB50N06LTM Fairchild 类似代替 TO-263-3
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQB50N06LTM, 52 A, Vds=60 V, 3引脚 D2PAK (TO-263)封装
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N 通道 STripFET™ II，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics
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