Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 5.00 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 2 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 49 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 2.80 A
Technical parameters/rise time: 42 ns
Technical parameters/Input capacitance (Ciss): 670pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 46 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta), 49W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD4NK60ZT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD4NK60ZT4 功率场效应管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 2.3 V
|
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