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Model FQU5N50CTU
Description Trans MOSFET N-CH 500V 4A 3Pin(3+Tab) IPAK Rail
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Brand: Fairchild
Packaging TO-251-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9988) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 500 V

Technical parameters/rated current: 5.00 A

Technical parameters/drain source resistance: 1.40 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2.5 W

Technical parameters/drain source voltage (Vds): 500 V

Technical parameters/leakage source breakdown voltage: 500 V

Technical parameters/breakdown voltage of gate source: ±30.0 V

Technical parameters/Continuous drain current (Ids): 4.00 A

Technical parameters/rise time: 46 ns

Technical parameters/Input capacitance (Ciss): 625pF @25V(Vds)

Technical parameters/descent time: 48 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2.5W (Ta), 48W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-251-3

External dimensions/length: 6.8 mm

External dimensions/width: 2.5 mm

External dimensions/height: 6.3 mm

External dimensions/packaging: TO-251-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQP5N50C FQP5N50C Fairchild 功能相似 TO-220-3
500V N沟道MOSFET 500V N-Channel MOSFET
PDF
FQP5N50C FQP5N50C ON Semiconductor 功能相似 TO-220-3
500V N沟道MOSFET 500V N-Channel MOSFET
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