Technical parameters/drain source resistance: 900 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 85.0 W
Technical parameters/leakage source breakdown voltage: 300 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 4.40 A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQP5N30
|
ON Semiconductor | 功能相似 | TO-220-3 |
300V N沟道MOSFET 300V N-Channel MOSFET
|
||
FQP5N30
|
Fairchild | 功能相似 | TO-220-3 |
300V N沟道MOSFET 300V N-Channel MOSFET
|
||
FQP7N30
|
Fairchild | 功能相似 | TO-220 |
300V N-Channel MOSFET
|
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