Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 1.2 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 2.8A
Technical parameters/rise time: 20 ns
Technical parameters/Input capacitance (Ciss): 335pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta), 20W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQD5P10
|
ON Semiconductor | 功能相似 |
Power Field-Effect Transistor
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|||
|
FQD5P10TF
|
Freescale | 类似代替 |
Trans MOSFET P-CH 100V 3.6A 3Pin(2+Tab) DPAK T/R
|
|||
FQD5P10TF
|
Fairchild | 类似代替 | TO-252-3 |
Trans MOSFET P-CH 100V 3.6A 3Pin(2+Tab) DPAK T/R
|
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