Technical parameters/drain source resistance: 540 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.13 W
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/leakage source breakdown voltage: 400 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 10.0 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: D2PAK
External dimensions/packaging: D2PAK
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQB11N40CTM
|
Fairchild | 功能相似 | TO-263-3 |
Trans MOSFET N-CH 400V 10.5A 3Pin(2+Tab) D2PAK T/R
|
||
FQB11N40CTM
|
ON Semiconductor | 功能相似 | TO-263-3 |
Trans MOSFET N-CH 400V 10.5A 3Pin(2+Tab) D2PAK T/R
|
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