Technical parameters/power supply voltage (DC): 3.30 V
Technical parameters/power supply current: 30 mA
Technical parameters/access time: 70.0 ns
Technical parameters/memory capacity: 8000 B
Technical parameters/access time (Max): 70 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 3.3 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 28
Encapsulation parameters/Encapsulation: DIP
External dimensions/packaging: DIP
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ST Microelectronics | 功能相似 | DIP |
CMOS 2K ×8 XEROPOWER SRAM CMOS 2K x 8 XEROPOWER SRAM
|
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