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Model 2MBI200SB-120-50
Description IGBT Discrete, Fuji Electric IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.
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Brand: FUJI
Packaging M235
Delivery time
Packaging method
Standard packaging quantity 1
910.25  yuan 910.25yuan
1+:
$ 1037.6896
10+:
$ 1001.2794
50+:
$ 996.7281
100+:
$ 992.1769
150+:
$ 984.8948
250+:
$ 978.5231
500+:
$ 972.1513
1000+:
$ 964.8692
Quantity
1+
10+
50+
100+
150+
Price
$1037.6896
$1001.2794
$996.7281
$992.1769
$984.8948
Price $ 1037.6896 $ 1001.2794 $ 996.7281 $ 992.1769 $ 984.8948
Start batch production 1+ 10+ 50+ 100+ 150+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8036) Minimum order quantity(1)
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Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.5 kW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/dissipated power (Max): 1.5 kW

Package parameters/number of pins: 7

Encapsulation parameters/Encapsulation: M235

External dimensions/length: 108 mm

External dimensions/width: 62 mm

External dimensions/height: 30 mm

External dimensions/packaging: M235

Compliant with standards/RoHS standards: RoHS Compliant

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