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Model HUFA76639S3S
Description 50A ， 100V ， 0.027 OhmN-channel, Logic Level UltraFET Power MOSFET 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Product QR code
Brand: Fairchild
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.68  yuan 1.68yuan
5+:
$ 2.2640
25+:
$ 2.0963
50+:
$ 1.9789
100+:
$ 1.9286
500+:
$ 1.8950
2500+:
$ 1.8531
5000+:
$ 1.8363
10000+:
$ 1.8112
Quantity
5+
25+
50+
100+
500+
Price
$2.2640
$2.0963
$1.9789
$1.9286
$1.8950
Price $ 2.2640 $ 2.0963 $ 1.9789 $ 1.9286 $ 1.8950
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5922) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 100 V

Technical parameters/rated current: 50.0 A

Technical parameters/drain source resistance: 23.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 180 W

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/leakage source breakdown voltage: 100 V

Technical parameters/breakdown voltage of gate source: ±16.0 V

Technical parameters/Continuous drain current (Ids): 50.0 A

Technical parameters/Input capacitance (Ciss): 2400pF @25V(Vds)

Technical parameters/rated power (Max): 180 W

Technical parameters/dissipated power (Max): 180W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STB40NF10LT4 STB40NF10LT4 ST Microelectronics 功能相似 TO-263-3
STMICROELECTRONICS STB40NF10LT4 晶体管, MOSFET, N沟道, 40 A, 100 V, 0.028 ohm, 10 V, 1.7 V
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