Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/rise time: 203 ns
Technical parameters/Input capacitance (Ciss): 1480pF @25V(Vds)
Technical parameters/rated power (Max): 110 W
Technical parameters/descent time: 74 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 110000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF76429S3S
|
ON Semiconductor | 功能相似 | TO-263-3 |
MOSFET N-CH 60V 47A D2PAK
|
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