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Model HUF75337S3S
Description MOSFET N-CH 55V 75A D2PAK
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Brand: ON Semiconductor
Packaging TO-263-3
Delivery time
Packaging method Rail
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3333) Minimum order quantity(1)
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Technical parameters/dissipated power: 175W (Tc)

Technical parameters/drain source voltage (Vds): 55 V

Technical parameters/rise time: 56 ns

Technical parameters/Input capacitance (Ciss): 1775pF @25V(Vds)

Technical parameters/descent time: 28 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 175W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/packaging: TO-263-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Rail

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
HUF75337S3S HUF75337S3S Freescale 功能相似
75A ， 55V ， 0.014 Ohm的N通道UltraFET功率MOSFET 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs
HUF75337S3S HUF75337S3S Intersil 功能相似
75A ， 55V ， 0.014 Ohm的N通道UltraFET功率MOSFET 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs
HUF75337S3S HUF75337S3S ON Semiconductor 功能相似 TO-263-3
75A ， 55V ， 0.014 Ohm的N通道UltraFET功率MOSFET 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs
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