Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 15.0 A
Technical parameters/drain source resistance: 90.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 45W (Tc)
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 15.0 A
Technical parameters/Input capacitance (Ciss): 250pF @25V(Vds)
Technical parameters/rated power (Max): 45 W
Technical parameters/dissipated power (Max): 45W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF75307D3
|
Freescale | 功能相似 |
N沟道 55V 15A
|
|||
HUF75307D3
|
Fairchild | 功能相似 | TO-251-3 |
N沟道 55V 15A
|
||
HUF75307D3
|
ON Semiconductor | 功能相似 | TO-251-3 |
N沟道 55V 15A
|
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