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Model FDMS3686S
Description PowerTrench® Dual N-channel MOSFET, Fairchild Semiconductor PowerTrench ® MOSFET is an optimized power switch that provides high system efficiency and power density. They combine small gate charges (Qg), small reverse recovery charges (Qrr), and soft reverse recovery main diodes, which help to quickly switch synchronous rectification in AC/DC power supplies. The latest PowerTrench ® MOSFET adopts a shielded gate structure, which can provide charge balance. By utilizing this advanced technology, the FOM (quality factor) of these devices is significantly lower than that of the previous generation. PowerTrench ® The soft body diode performance of MOSFETs can be achieved without the need for buffer circuits or the replacement of MOSFETs with higher rated voltages. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
Product QR code
Brand: Fairchild
Packaging Power-56-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
3.03  yuan 3.03yuan
5+:
$ 4.0959
25+:
$ 3.7925
50+:
$ 3.5801
100+:
$ 3.4891
500+:
$ 3.4284
2500+:
$ 3.3526
5000+:
$ 3.3222
10000+:
$ 3.2767
Quantity
5+
25+
50+
100+
500+
Price
$4.0959
$3.7925
$3.5801
$3.4891
$3.4284
Price $ 4.0959 $ 3.7925 $ 3.5801 $ 3.4891 $ 3.4284
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2318) Minimum order quantity(5)
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Technical parameters/number of channels: 2

Technical parameters/drain source resistance: 8 mΩ

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 2.5 W

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/leakage source breakdown voltage: 30 V

Technical parameters/Continuous drain current (Ids): 13A/23A

Technical parameters/Input capacitance (Ciss): 1785pF @10V(Vds)

Technical parameters/rated power (Max): 1 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2.2 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: Power-56-8

External dimensions/length: 5.1 mm

External dimensions/width: 6.1 mm

External dimensions/height: 1.05 mm

External dimensions/packaging: Power-56-8

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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