Technical parameters/polarity: N+P
Technical parameters/drain source voltage (Vds): 30V, 20V
Technical parameters/Continuous drain current (Ids): 9.3A/5.6A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS4501H
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS4501H 场效应管, MOSFET, 9.3A, 30V, SOIC
|
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