Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 12A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDP3632
|
Fairchild | 功能相似 | TO-220-3 |
PowerTrench® N 通道 MOSFET,10A 至 19.9A,Fairchild Semiconductor ### MOSFET 晶体管,Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合,包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性,以减少结电容和反向恢复电荷,无需额外外部元件即可保持系统启动和运行更长时间。
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