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Model FDPF6N60ZUT
Description UniFET™ N Channel MOSFET, Fairchild Semiconductor UniFET ™ MOSFET is Fairchild Semiconductor's high-voltage MOSFET series. It has the smallest on state resistance in planar MOSFETs, as well as excellent switching performance and high avalanche energy intensity. In addition, the internal gate source ESD diode enables UniFET-II ™ MOSFET can withstand surge stress exceeding 2000V HBM. UniFET ™ MOSFET is suitable for switch mode power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supply, ATX (advanced technology extension), and electronic lamp ballasts. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
Product QR code
Brand: Fairchild
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
4.96  yuan 4.96yuan
5+:
$ 6.6947
25+:
$ 6.1988
50+:
$ 5.8516
100+:
$ 5.7029
500+:
$ 5.6037
2500+:
$ 5.4797
5000+:
$ 5.4301
10000+:
$ 5.3557
Quantity
5+
25+
50+
100+
500+
Price
$6.6947
$6.1988
$5.8516
$5.7029
$5.6037
Price $ 6.6947 $ 6.1988 $ 5.8516 $ 5.7029 $ 5.6037
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6099) Minimum order quantity(5)
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Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 33.8W (Tc)

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/Continuous drain current (Ids): 4.5A

Technical parameters/Input capacitance (Ciss): 865pF @25V(Vds)

Technical parameters/rated power (Max): 33.8 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 33.8W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.36 mm

External dimensions/width: 4.9 mm

External dimensions/height: 16.07 mm

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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