Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0082 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 208 W
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 75A
Technical parameters/rise time: 265 ns
Technical parameters/Input capacitance (Ciss): 7300pF @25V(Vds)
Technical parameters/rated power (Max): 208 W
Technical parameters/descent time: 115 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 208W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.83 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFB4710PBF
|
International Rectifier | 功能相似 | TO-220-3 |
INFINEON IRFB4710PBF 晶体管, MOSFET, N沟道, 75 A, 100 V, 14 mohm, 10 V, 5.5 V
|
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