Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 36 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 95 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 5.5A
Technical parameters/rise time: 46 ns
Technical parameters/Input capacitance (Ciss): 1250pF @25V(Vds)
Technical parameters/rated power (Max): 95 W
Technical parameters/descent time: 26 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 95W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDD3682
|
Fairchild | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD3682 晶体管, MOSFET, N沟道, 32 A, 100 V, 0.032 ohm, 10 V, 4 V
|
||
NVD6415ANLT4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
N沟道功率MOSFET的100 V， 23 A， 56米？逻辑电平 N-Channel Power MOSFET 100 V, 23 A, 56 m Logic Level
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NVD6416ANLT4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
DPAK N-CH 100V 19A
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