Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 60.0 A
Technical parameters/rated power: 208 W
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 208 W
Technical parameters/rise time: 25.0 ns
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/reverse recovery time: 55 ns
Technical parameters/rated power (Max): 208 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 208000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/height: 20.82 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Freescale | 类似代替 | TO-247 |
单晶体管, IGBT, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 引脚
|
||
HGTG20N60A4D
|
ON Semiconductor | 类似代替 | TO-247-3 |
单晶体管, IGBT, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 引脚
|
||
|
|
Intersil | 类似代替 |
单晶体管, IGBT, 40 A, 1.8 V, 165 W, 600 V, TO-247, 3 引脚
|
|||
HGTG30N60A4
|
ON Semiconductor | 类似代替 | TO-247-3 |
分离式 IGBT，Fairchild Semiconductor ### IGBT 分立件和模块，Fairchild Semiconductor 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review