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Model FCPF190N60E_F152
Description Power Field-Effect Transistor, 20.6A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Brand: ON Semiconductor
Packaging TO-220
Delivery time
Packaging method Rail
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9538) Minimum order quantity(1)
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Technical parameters/rise time: 14 ns

Technical parameters/Input capacitance (Ciss): 2385pF @25V(Vds)

Technical parameters/descent time: 15 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 39000 mW

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220

External dimensions/packaging: TO-220

Other/Product Lifecycle: Active

Other/Packaging Methods: Rail

Compliant with standards/RoHS standards:

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