Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 1.00 A
Technical parameters/capacitors: 1.2 pF
Technical parameters/output current: ≤1.00 A
Technical parameters/breakdown voltage: 20 V
Technical parameters/forward voltage: 400 mV
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-253-4
External dimensions/packaging: TO-253-4
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
HP | 功能相似 |
SILICON, MIXER DIODE, SOT-143, 4Pin
|
|||
HSMS-2817-BLK
|
HP | 功能相似 | SOT-143 |
表面贴装射频肖特基势垒二极管 Surface Mount RF Schottky Barrier Diodes
|
||
|
|
Agilent | 功能相似 |
Diode Schottky 20V 4Pin(3+Tab) SOT-143 T/R
|
|||
HSMS-2817-TR1G
|
AVAGO Technologies | 功能相似 | TO-253-4 |
Diode Schottky 20V 4Pin(3+Tab) SOT-143 T/R
|
||
|
|
Agilent | 功能相似 |
Diode Schottky 20V 4Pin(3+Tab) SOT-143 T/R
|
|||
HSMS-2817-TR2G
|
Broadcom | 功能相似 | TO-253-4 |
Diode Schottky 20V 4Pin(3+Tab) SOT-143 T/R
|
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