Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 56.0 A
Technical parameters/rated power: 200 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.025 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 200 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 2.00 nF
Technical parameters/gate charge: 57.0 nC
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 56.0 A
Technical parameters/rise time: 60 ns
Technical parameters/Input capacitance (Ciss): 2000pF @25V(Vds)
Technical parameters/rated power (Max): 200 W
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.83 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF3710PBF
|
International | 功能相似 | Through Hole |
INFINEON IRF3710PBF 晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
|
||
IRF3710PBF
|
IFC | 功能相似 |
INFINEON IRF3710PBF 晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
|
|||
|
IRF3710PBF
|
IFA | 功能相似 |
INFINEON IRF3710PBF 晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
|
|||
STP40NF10
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP40NF10 晶体管, MOSFET, N沟道, 50 A, 100 V, 0.025 ohm, 10 V, 3 V
|
||
STP80NF12
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP80NF12 晶体管, MOSFET, N沟道, 80 A, 120 V, 13 mohm, 10 V, 2 V
|
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