Technical parameters/frequency: 2GHz ~ 18GHz
Technical parameters/power supply current: 64 mA
Technical parameters/dissipated power: 1320 mW
Technical parameters/gain: 13 dB
Technical parameters/testing frequency: 12GHz ~ 18GHz
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1320 mW
Technical parameters/power supply voltage: 5 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: Die
External dimensions/packaging: Die
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Other/Manufacturing Applications: Aerospace and Defense, Radar
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HMC606
|
ADI | 功能相似 | DIE |
RF Amplifier WBand lo Phase Noise amp Chip, 2-18GHz
|
||
HMC606
|
Hittite | 功能相似 |
RF Amplifier WBand lo Phase Noise amp Chip, 2-18GHz
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review