Technical parameters/rise/fall time: 35ns, 30ns
Technical parameters/number of output interfaces: 3
Technical parameters/power supply voltage: 7V ~ 15V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DIP-16
External dimensions/packaging: DIP-16
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 完全替代 | SOP |
MOSFET DRVR 0.3A 3Out Hi Side 3-Phase Brdg 16Pin SOIC N T/R
|
||
HIP4083ABT
|
Intersil | 完全替代 | SOIC-16 |
MOSFET DRVR 0.3A 3Out Hi Side 3-Phase Brdg 16Pin SOIC N T/R
|
||
HIP4083ABZ
|
Renesas Electronics | 类似代替 | SOIC-16 |
80V/0.3A 峰值0.5A 三相高端驱动器
|
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