Technical parameters/output current: 60.0 mA
Technical parameters/power supply current: 21 mA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/conversion rate: 1.90 kV/μs
Technical parameters/Over temperature protection: No
Technical parameters/input compensation voltage: 8 mV
Technical parameters/input bias current: 25 µA
Technical parameters/3dB bandwidth: 850 MHz
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Renesas Electronics | 类似代替 | SOIC-8 |
为850MHz ,低失真,输出限制,可编程增益缓冲放大器 850MHz, Low Distortion, Output Limiting, Programmable Gain, Buffer Amplifier
|
||
HFA1113IB
|
Harris | 类似代替 | SOP |
为850MHz ,低失真,输出限制,可编程增益缓冲放大器 850MHz, Low Distortion, Output Limiting, Programmable Gain, Buffer Amplifier
|
||
|
|
Renesas Electronics | 类似代替 | SOIC-8 |
为850MHz ,低失真,输出限制,可编程增益缓冲放大器 850MHz, Low Distortion, Output Limiting, Programmable Gain, Buffer Amplifier
|
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