Technical parameters/forward voltage: 1.70 V
Technical parameters/reverse recovery time: 75 ns
Technical parameters/forward current: 3 A
Technical parameters/Maximum forward surge current (Ifsm): 125 A
Technical parameters/forward voltage (Max): 1.7 V
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-201AA
External dimensions/height: 9.50 mm
External dimensions/packaging: DO-201AA
Physical parameters/weight: 1.12 g
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2016/06/20
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rectron Semiconductor | 类似代替 | DO-201AD |
TAIWAN SEMICONDUCTOR HER307G 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 125 A
|
||
|
|
Leshan Radio | 类似代替 | DO-201AD |
TAIWAN SEMICONDUCTOR HER307G 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 125 A
|
||
|
|
Rectron | 类似代替 |
TAIWAN SEMICONDUCTOR HER307G 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 125 A
|
|||
HER307G
|
Multicomp | 类似代替 | DO-201AD |
TAIWAN SEMICONDUCTOR HER307G 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 125 A
|
||
HER307G
|
DIYI Electronic | 类似代替 | DO-201AD |
TAIWAN SEMICONDUCTOR HER307G 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 125 A
|
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