Technical parameters/power supply current: 10 mA
Technical parameters/digits: 8
Technical parameters/access time: 25 ns
Technical parameters/access time (Max): 25 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 2.7V ~ 3.6V
Technical parameters/power supply voltage (Max): 3.6 V
Technical parameters/power supply voltage (Min): 2.7 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
N25S818HAS21I
|
ON Semiconductor | 类似代替 | SOIC-8 |
N25S818HA 系列 256 K字节 1.8 V 低功耗 串行 SRAM - SOIC-8
|
||
N25S830HAT22I
|
ON Semiconductor | 完全替代 | TSSOP-8 |
ON SEMICONDUCTOR N25S830HAT22I 芯片, 存储器, SRAM, 256Kb, 串行口, 20MHz, TSSOP-8
|
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