Technical parameters/polarity: NPN+PNP
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SC-88
External dimensions/packaging: SC-88
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5312DW1T1
|
ON Semiconductor | 类似代替 | SC-88-6 |
双偏置电阻晶体管 Dual Bias Resistor Transistors
|
||
MUN5312DW1T2G
|
ON Semiconductor | 类似代替 | SOT-363 |
MUN5312DW1: 互补双极数字晶体管 (BRT)
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review