Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 50 @10mA, 5V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/gain bandwidth: 230 MHz
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-883
External dimensions/length: 1.02 mm
External dimensions/width: 0.62 mm
External dimensions/height: 0.47 mm
External dimensions/packaging: SOT-883
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Philips | 类似代替 |
NPN电阻配备晶体管; R 1 = 4.7千瓦, R2 = 10千瓦 NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 10 kW
|
|||
PDTC143XM
|
NXP | 类似代替 | DFN |
NPN电阻配备晶体管; R 1 = 4.7千瓦, R2 = 10千瓦 NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 10 kW
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review