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Model DN3135N8-G
Description Supertex N Microchip's Supertex series N-channel depletion type DMOS FET transistors are suitable for applications that require high breakdown voltage, high input impedance, low input capacitance, and fast switching speed. ###Characteristics: High input impedance, low input capacitance, fast switching speed, low on resistance, no secondary breakdown, low input and output leakage. Typical applications: normally open switch, solid-state relay converter, linear amplifier, constant current source, power supply circuit, telecommunications, MOSFET transistor, Microchip
Product QR code
Brand: Microchip
Packaging SOT-89
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.43  yuan 2.43yuan
5+:
$ 3.2778
25+:
$ 3.0350
50+:
$ 2.8650
100+:
$ 2.7922
500+:
$ 2.7436
2500+:
$ 2.6829
5000+:
$ 2.6587
10000+:
$ 2.6222
Quantity
5+
25+
50+
100+
500+
Price
$3.2778
$3.0350
$2.8650
$2.7922
$2.7436
Price $ 3.2778 $ 3.0350 $ 2.8650 $ 2.7922 $ 2.7436
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3548) Minimum order quantity(5)
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Technical parameters/rated power: 1.3 W

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 35 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.3 W

Technical parameters/drain source voltage (Vds): 350 V

Technical parameters/Continuous drain current (Ids): 0.135A

Technical parameters/rise time: 15 ns

Technical parameters/Input capacitance (Ciss): 120pF @25V(Vds)

Technical parameters/rated power (Max): 1.3 W

Technical parameters/descent time: 20 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1.3W (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-89

External dimensions/length: 4.6 mm

External dimensions/width: 2.6 mm

External dimensions/height: 1.6 mm

External dimensions/packaging: SOT-89

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Other/Manufacturing Applications: Communications & Networking, Communication and Network, Power Management, Power Management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
DN3135N8 DN3135N8 Suptertex 完全替代
Trans MOSFET N-CH 350V 0.135A 4Pin(3+Tab) SOT-89
DN3135N8-G DN3135N8-G Supertex 功能相似 SOT-89
Supertex N 通道耗尽型 MOSFET 晶体管 Microchip 的 Supertex 系列 N 通道耗尽型 DMOS FET 晶体管适用于要求高击穿电压、高输入阻抗、低输入电容和切换速度快的应用。 ### 特点 高输入阻抗 低输入电容 切换速度快 低接通电阻 无次级击穿 低输入和输出泄漏 ### 典型应用 常开开关 固态继电器 转换器 线性放大器 恒定电流源 电源电路 电信 ### MOSFET 晶体管，Microchip
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DN3135N8-G DN3135N8-G Microchip 功能相似 SOT-89
Supertex N 通道耗尽型 MOSFET 晶体管 Microchip 的 Supertex 系列 N 通道耗尽型 DMOS FET 晶体管适用于要求高击穿电压、高输入阻抗、低输入电容和切换速度快的应用。 ### 特点 高输入阻抗 低输入电容 切换速度快 低接通电阻 无次级击穿 低输入和输出泄漏 ### 典型应用 常开开关 固态继电器 转换器 线性放大器 恒定电流源 电源电路 电信 ### MOSFET 晶体管，Microchip
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