Technical parameters/power supply voltage (DC): 33.0 V
Technical parameters/output current: ≤40 mA
Technical parameters/power supply current: 10.8 mA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/common mode rejection ratio: 80 dB
Technical parameters/bandwidth: 180 MHz
Technical parameters/conversion rate: 190 V/μs
Technical parameters/Over temperature protection: No
Technical parameters/input compensation voltage: 2 mV
Technical parameters/input bias current: 22000 nA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -45 ℃
Technical parameters/3dB bandwidth: 220 MHz
Technical parameters/gain bandwidth: 175 MHz
Technical parameters/Common Mode Rejection Ratio (Min): 80 dB
Technical parameters/power supply voltage (Max): 33 V
Technical parameters/power supply voltage (Min): 5 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -45℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
EL2125CSZ-T7
|
Intersil | 类似代替 | SOIC-8 |
超低噪声,低功耗,宽带放大器 Ultra-Low Noise, Low Power, Wideband Amplifier
|
||
EL2125CSZ-T7
|
Renesas Electronics | 类似代替 | SOIC-8 |
超低噪声,低功耗,宽带放大器 Ultra-Low Noise, Low Power, Wideband Amplifier
|
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