Technical parameters/drain source resistance: 0.08 Ω
Technical parameters/dissipated power: 1.66 W
Technical parameters/input capacitance: 350pF @15V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/thermal resistance: 100℃/W (RθJA)
Technical parameters/Input capacitance (Ciss): 350pF @15V(Vds)
Technical parameters/descent time: 35 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3.04 mm
External dimensions/height: 1.02 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CPH3448-TL-H
|
ON Semiconductor | 功能相似 | SC-96 |
4A,30V,N沟道MOSFET
|
||
PMV60EN,215
|
NXP | 功能相似 | SOT-23-3 |
TO-236AB N-CH 30V 4.7A
|
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