Technical parameters/power supply voltage (DC): 2.50V (min)
Technical parameters/output current: ≤150 mA
Technical parameters/power supply current: 2.5 mA
Technical parameters/number of circuits: 2
Technical parameters/number of channels: 2
Technical parameters/Input compensation drift: 2.00 µV/K
Technical parameters/gain bandwidth product: 24 MHz
Technical parameters/input compensation voltage: 1.8 mV
Technical parameters/input bias current: 4 pA
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/gain bandwidth: 24 MHz
Technical parameters/Common Mode Rejection Ratio (Min): 63 dB
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: DFN-8
External dimensions/length: 3 mm
External dimensions/width: 3 mm
External dimensions/height: 0.88 mm
External dimensions/packaging: DFN-8
Physical parameters/operating temperature: -40℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MCP632-E/SN
|
Microchip | 类似代替 | SOIC-8 |
MCP632 系列 5.5 V 24 MHz 轨对轨 I/O 运算放大器 - SOIC-8
|
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