Technical parameters/rated voltage (DC): 3.90 V
Technical parameters/tolerances: ±5 %
Technical parameters/rated power: 225 mW
Technical parameters/forward voltage: 900mV @10mA
Technical parameters/dissipated power: 300 mW
Technical parameters/test current: 20 mA
Technical parameters/voltage regulation value: 3.9 V
Technical parameters/rated power (Max): 225 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.94 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Plastic
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBZ5228BLT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR MMBZ5228BLT1G 单管二极管 齐纳, 3.9 V, 225 mW, SOT-23, 5 %, 3 引脚, 150 °C
|
||
MMSZ4685T1G
|
ON Semiconductor | 功能相似 | SOD-123-2 |
ON SEMICONDUCTOR MMSZ4685T1G 单管二极管 齐纳, 3.6 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
|
||
MMSZ5227BT1G
|
ON Semiconductor | 功能相似 | SOD-123-2 |
ON SEMICONDUCTOR MMSZ5227BT1G 单管二极管 齐纳, 3.6 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
|
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