Technical parameters/frequency: 140 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1.6 W
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 12A
Technical parameters/minimum current amplification factor (hFE): 200 @500mA, 2V
Technical parameters/rated power (Max): 1.6 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1600 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: ECH-8
External dimensions/packaging: ECH-8
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ECH8102-TL-H
|
ON Semiconductor | 功能相似 | ECH-8 |
Power Bipolar Transistor
|
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