Technical parameters/power supply voltage (DC): 4.00V (min)
Technical parameters/rise/fall time: 20 ns
Technical parameters/number of output interfaces: 1
Technical parameters/output current: 9 A
Technical parameters/dissipated power: 0.65 W
Technical parameters/rise time: 70 ns
Technical parameters/descent time: 30 ns
Technical parameters/descent time (Max): 30 ns
Technical parameters/rise time (Max): 70 ns
Technical parameters/operating temperature (Max): 105 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 650 mw
Technical parameters/power supply voltage: 4V ~ 15V
Technical parameters/power supply voltage (Max): 15 V
Technical parameters/power supply voltage (Min): 4 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
UCC27322DRG4
|
TI | 完全替代 | SOIC-8 |
单9 ,高速低侧MOSFET驱动器与启用 SINGLE 9-A HIGH SPEED LOW- SIDE MOSFET DRIVER WITH ENABLE
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