Technical parameters/frequency: 3 MHz
Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 10.0 A
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 80 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 10A
Technical parameters/DC current gain (hFE): 40
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 80000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-218
External dimensions/packaging: TO-218
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
Customs information/HTS code: 85412900951
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TIP33CG
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ON Semiconductor | 功能相似 | TO-247-3 |
ON SEMICONDUCTOR TIP33CG 单晶体管 双极, NPN, 100 V, 3 MHz, 80 W, 10 A, 20 hFE 新
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Motorola | 功能相似 |
ON SEMICONDUCTOR TIP33CG 单晶体管 双极, NPN, 100 V, 3 MHz, 80 W, 10 A, 20 hFE 新
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