Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 700 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 800 mW
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.7A
Technical parameters/minimum current amplification factor (hFE): 120 @50mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 400
Technical parameters/rated power (Max): 800 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 4.58 mm
External dimensions/width: 3.86 mm
External dimensions/height: 4.58 mm
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSC1008CYBU
|
Fairchild | 类似代替 | TO-226-3 |
NPN Epitacial硅晶体管 NPN Epitacial Silicon Transistor
|
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KSC1008YBU
|
Fairchild | 功能相似 | TO-226-3 |
小信号 NPN 晶体管，60V 至 100V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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