Technical parameters/minimum current amplification factor (hFE): 300
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.2 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: PowerDI™ 5
External dimensions/length: 4.05 mm
External dimensions/width: 5.45 mm
External dimensions/height: 1.15 mm
External dimensions/packaging: PowerDI™ 5
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SD1803
|
UTC | 功能相似 | TO-251 |
PNP/NPN Epitaxial Planar Silicon Transistors
|
||
2SD1803
|
Sanyo Semiconductor | 功能相似 |
PNP/NPN Epitaxial Planar Silicon Transistors
|
|||
2SD1803
|
ON Semiconductor | 功能相似 | TP-FA |
PNP/NPN Epitaxial Planar Silicon Transistors
|
||
2SD1803S
|
Sanyo Semiconductor | 功能相似 |
Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
|
|||
2SD1803S
|
ON Semiconductor | 功能相似 | TP |
Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
|
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