Technical parameters/dissipated power: 2.5 W
Technical parameters/breakdown voltage (collector emitter): 200 V
Technical parameters/minimum current amplification factor (hFE): 40 @1A, 5V
Technical parameters/rated power (Max): 2.5 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-66
External dimensions/packaging: TO-66
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NJS | 功能相似 |
NTE ELECTRONICS 2N3584 Bipolar (BJT) Single Transistor, NPN, 350V, 35W, 5A, 100 hFE
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2N3584
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Microsemi | 功能相似 | TO-66-2 |
NTE ELECTRONICS 2N3584 Bipolar (BJT) Single Transistor, NPN, 350V, 35W, 5A, 100 hFE
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Comset Semiconductors | 功能相似 |
NTE ELECTRONICS 2N3584 Bipolar (BJT) Single Transistor, NPN, 350V, 35W, 5A, 100 hFE
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2N3584
|
Central Semiconductor | 功能相似 | TO-66-2 |
NTE ELECTRONICS 2N3584 Bipolar (BJT) Single Transistor, NPN, 350V, 35W, 5A, 100 hFE
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Boca Semiconductor | 功能相似 |
NTE ELECTRONICS 2N3585 单晶体管 双极, NPN, 300 V, 35 W, 2 A, 40 hFE
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2N3585
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NTE Electronics | 功能相似 | TO-66 |
NTE ELECTRONICS 2N3585 单晶体管 双极, NPN, 300 V, 35 W, 2 A, 40 hFE
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2N3585
|
Mospec | 功能相似 | TO-66 |
NTE ELECTRONICS 2N3585 单晶体管 双极, NPN, 300 V, 35 W, 2 A, 40 hFE
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2N3585
|
Central Semiconductor | 功能相似 | TO-66-2 |
NTE ELECTRONICS 2N3585 单晶体管 双极, NPN, 300 V, 35 W, 2 A, 40 hFE
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ETC | 功能相似 |
Trans GP BJT NPN 150V 25A 3Pin(2+Tab) TO-3
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Microsemi | 功能相似 | TO-3 |
Trans GP BJT NPN 150V 25A 3Pin(2+Tab) TO-3
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2N5039
|
ON Semiconductor | 功能相似 |
Trans GP BJT NPN 150V 25A 3Pin(2+Tab) TO-3
|
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