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Model IRF8252PBF
Description N Channel power MOSFETs 20A to 29A, Infineon's discrete HEXFET ® The power MOSFET series includes surface mount and lead packaged N-channel devices, with a form factor that can handle almost any board layout and thermal design challenge. Throughout the entire range, the reference on resistance reduces conduction losses, allowing designers to provide optimal system efficiency. ###MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
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Brand: Infineon
Packaging SOIC-8
Delivery time
Packaging method Tube
Standard packaging quantity 1
1.84  yuan 1.84yuan
5+:
$ 2.4813
25+:
$ 2.2975
50+:
$ 2.1688
100+:
$ 2.1137
500+:
$ 2.0769
2500+:
$ 2.0310
5000+:
$ 2.0126
10000+:
$ 1.9850
Quantity
5+
25+
50+
100+
500+
Price
$2.4813
$2.2975
$2.1688
$2.1137
$2.0769
Price $ 2.4813 $ 2.2975 $ 2.1688 $ 2.1137 $ 2.0769
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3035) Minimum order quantity(5)
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Technical parameters/rated power: 2.5 W

Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.002 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2.5 W

Technical parameters/threshold voltage: 1.8 V

Technical parameters/drain source voltage (Vds): 25 V

Technical parameters/Continuous drain current (Ids): 25A

Technical parameters/rise time: 32 ns

Technical parameters/Input capacitance (Ciss): 5305pF @13V(Vds)

Technical parameters/descent time: 12 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2.5W (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/length: 5 mm

External dimensions/width: 4 mm

External dimensions/height: 1.5 mm

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Computers and computer peripherals, power management, communication and networking, Power Management, Battery Protection, Load Switch Low Side, Communications & Networking, Computers & Computer Peripherals, Load Switch High Side

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF8252TRPBF IRF8252TRPBF International Rectifier 完全替代 SOIC-8
N沟道 25 V 2.5 W 35 nC 功率Mosfet 表面贴装 - SOIC-8
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