Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -100 mA
Technical parameters/rated power: 0.15 W
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.15 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 100 @1mA, 5V
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: VMT-3
External dimensions/length: 1.2 mm
External dimensions/width: 0.8 mm
External dimensions/height: 0.5 mm
External dimensions/packaging: VMT-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DTA143TM3T5G
|
ON Semiconductor | 功能相似 | SOT-723-3 |
数字晶体管（ BRT ） PNP硅表面贴装晶体管与单片偏置电阻网络 Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review