Technical parameters/forward voltage: 1.1 V
Technical parameters/reverse recovery time: 2000 ns
Technical parameters/Maximum reverse voltage (Vrrm): 400 V
Technical parameters/forward current: 1 A
Technical parameters/maximum reverse leakage current (Ir): 5 uA
Technical parameters/forward current (Max): 1 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214BA
External dimensions/packaging: DO-214BA
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 1500
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
GF1G-E3/5CA
|
VISHAY | 功能相似 | DO-214BA |
VISHAY GF1G-E3/5CA 标准恢复二极管, 单, 400 V, 1 A, 1.1 V, 3 µs, 30 A
|
||
GF1G-E3/5CA
|
Vishay Semiconductor | 功能相似 | DO-214BA |
VISHAY GF1G-E3/5CA 标准恢复二极管, 单, 400 V, 1 A, 1.1 V, 3 µs, 30 A
|
||
GF1G-E3/67A
|
Vishay Semiconductor | 类似代替 | DO-214BA |
1A,高达 450V 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器,Vishay Semiconductor
|
||
GF1G-E3/67A
|
VISHAY | 类似代替 | DO-214BA |
1A,高达 450V 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器,Vishay Semiconductor
|
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