Technical parameters/forward voltage: 1.1 V
Technical parameters/Maximum reverse voltage (Vrrm): 200V
Technical parameters/forward current: 20 A
Technical parameters/Maximum forward surge current (Ifsm): 240 A
Technical parameters/maximum reverse leakage current (Ir): 5uA
Encapsulation parameters/Encapsulation: GBJ
External dimensions/packaging: GBJ
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
GBJ2002-F
|
Diodes | 功能相似 | SIP-4 |
Diode Rectifier Bridge Single 200V 20A 4Pin(4+Tab) Case GBJ Tube
|
||
|
|
VISHAY | 功能相似 | GSIB-5S |
Diode Rectifier Bridge Single 200V 3.5A 4Pin Case GSIB-5S Tube
|
||
VSIB2520-E3/45
|
Vishay Semiconductor | 功能相似 | GSIB-5S |
DIODE 25A 200V SGL BRIDGE 4SIP
|
||
VSIB2520-E3/45
|
VISHAY | 功能相似 | GSIB-5S |
DIODE 25A 200V SGL BRIDGE 4SIP
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review