Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): -180V
Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): -140V
Other/Collector Continuous Output Current (IC): -4A
Other/Cut off Frequency fTTransmission Frequency (fT): 110MHz
Other/DC current gain hFEDC Current Gain (hFE): 100~300
Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: -370mV/-0.37V
Other/dissipated power PcPoWer Dissipation: 3W
Other/Specification PDF: __
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FZT955TC
|
Diodes | 完全替代 | TO-261-4 |
TRANSISTOR PNP HI CURRENT SOT223
|
||
ZX5T955GTA
|
Diodes Zetex | 类似代替 | SOT-223 |
三极管
|
||
ZX5T955GTA
|
Zetex | 类似代替 | SOT-223 |
三极管
|
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