Technical parameters/frequency: 175 MHz
Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 2.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 2 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 100 @500mA, 2V
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FZT653
|
Vishay Semiconductor | 类似代替 | SOT-223 |
单晶体管 双极, NPN, 100 V, 175 MHz, 2 W, 2 A, 200 hFE
|
||
FZT653
|
Zetex | 类似代替 | SOT-223 |
单晶体管 双极, NPN, 100 V, 175 MHz, 2 W, 2 A, 200 hFE
|
||
FZT653TA
|
Diodes | 完全替代 | TO-261-4 |
三极管
|
||
FZT653TA
|
Diodes Zetex | 完全替代 | SOT-223 |
三极管
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review