Technical parameters/frequency: 150 MHz
Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 3.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 3 W
Technical parameters/gain bandwidth product: 150 MHz
Technical parameters/breakdown voltage (collector emitter): 20 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 400 @2A, 2V
Technical parameters/Maximum current amplification factor (hFE): 150
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 3000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.65 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FZT689B
|
Diodes | 功能相似 | SOT-223 |
单晶体管 双极, NPN, 20 V, 150 MHz, 2 W, 3 A, 500 hFE
|
||
FZT689BTC
|
Diodes | 功能相似 | SOT-223-4 |
TRANSISTOR NPN HI GAIN SOT223
|
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