Technical parameters/frequency: 100 MHz
Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -1.00 A
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 2 W
Technical parameters/gain bandwidth product: 100 MHz
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 100 @500mA, 2V
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.65 mm
External dimensions/packaging: TO-261-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Diodes | 功能相似 | SOT-223-4 |
双极晶体管 - 双极结型晶体管(BJT) NPN Medium Power
|
||
FZT549TC
|
Vishay Semiconductor | 功能相似 | TO-261-4 |
双极晶体管 - 双极结型晶体管(BJT) NPN Medium Power
|
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