Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -100 mA
Technical parameters/rated power: 0.2 W
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 100 @1mA, 5V
Technical parameters/rated power (Max): 200 mW
Technical parameters/DC current gain (hFE): 250
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/height: 1.2 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DTA114TUAT106
|
ROHM Semiconductor | 类似代替 | SOT-323-3 |
PNP -100mA -50V数字晶体管（偏置电阻内置晶体管） PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
|
||
DTA114TUBTL
|
ROHM Semiconductor | 完全替代 | UMT-3F-3 |
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 10 kohm
|
||
DTA114TUBTL
|
Ricoh | 完全替代 |
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 10 kohm
|
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