Technical parameters/dissipated power: 1.3 W
Technical parameters/test current: 20 mA
Technical parameters/voltage regulation value: 12 V
Technical parameters/operating temperature (Max): 175 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-41
External dimensions/packaging: DO-41
Other/Packaging Methods: Each
Other/Manufacturing Applications: Industrial
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZV85-C12
|
NXP | 功能相似 | DO-41 |
NXP BZV85-C12 单管二极管 齐纳, 12 V, 1 W, DO-41, 5 %, 2 引脚, 200 °C
|
||
|
|
ON Semiconductor | 功能相似 | DO-41 |
FAIRCHILD SEMICONDUCTOR BZX85-C12 单管二极管 齐纳, 12 V, 1 W, DO-41, 5 %, 2 引脚, 200 °C
|
||
BZX85C12-TAP
|
Vishay Dale | 完全替代 |
VISHAY BZX85C12-TAP 单管二极管 齐纳, AEC-Q101, 12 V, 1.3 W, DO-41, 5 %, 2 引脚, 175 °C
|
|||
BZX85C12-TAP
|
Vishay Semiconductor | 完全替代 | DO-41 |
VISHAY BZX85C12-TAP 单管二极管 齐纳, AEC-Q101, 12 V, 1.3 W, DO-41, 5 %, 2 引脚, 175 °C
|
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